The 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
Program
Oct. 6 (Wed), 2004
09:00- Registration
10:00-10:10 Opening Address
A. Watanabe (JAXA) S. Matsuda(JAXA)
Plenary-1 S. Matsuda(JAXA)
10:10-11:00 A.H.Johnston (JPL) Single-Event Effects in Highly Scaled Devices for Space Applications
Plenary-2 S. Matsuda(JAXA)
11:00-11:50 K.Ohnishi (Nihon Univ.) Progress of the Radiation Effects Research on Semiconductor Devices in Japan
11:50-13:30 Lunch
Session I (Neutron) A.H.Johnston (JPL)/ I. Nashiyama(HIREC)
13:30-14:00 C.Slayman (Sun Microsystem) Terrestrial Neutron Single-Event Effect in Workstations and Servers
14:00-14:30 E.Ibe (Hitachi, Ltd.) Distinctive Asymmetry inNeutron-Induced Multiple Error Patterns of 0.13µm Process SRAM
14:30-14:50 T.Sato (JAERI) Calculation of Neutron Spectra inside Spacecrafts by 3-Dimensional Particle and Heavy Ion Transport Code System PHITS
14:50-15:10 K.Ito (JNC) Neutron Irradiation Fields for Space Technology Application in Experimental Fast Reactor JOYO
15:10-15:30 Break
Session I-II(Space Environment) C.Slayman (Sun Microsystem)/T. Hirao(JAERI)
15:30-16:00 R. Ecoffet (CNES) Space Environment and radiation effects activities at CNES
16:00-16:30 T.Obara(NICT) On-orbit measurements of space radiation and effects by MDS-1(Tsubasa)
Session II(TID/DISP) S. Taylor (ESTEC)/H. Ohyama (KNCT)
16:30-17:00 A.Mohammadzadeh (ESTEC) Radiation Effects in Photonic Imaging Devices for European Space Agency Missions
17:00-17:30 H.Shindoh (JAXA) Bulk damage observed in recent LSI devices
18:30- Banquet

Oct. 7 (Thur), 2004
08:45- Registration
Session III-I (Solar Cell) R.C. Lacoe (Aerospace Corp.)/M. Yamaguchi (Toyota TI)
09:30-10:00 S. Taylor (ESTEC) Solar Cells in Radiation Environments -ESA activities
10:00-10:30 M.Imaizumi (JAXA) R&D Activity on III-V High-Efficiency, Rad-Hard Solar Cells in Japan
10:30-10:50 R.J.Walters (NRL) Materials on the International Space Station Forward Technology Solar Cell Experiment
Session III-II (Solar Cell) R.J.Walters (NRL)/M.Imaizumi (JAXA)
10:50-11:10 N.J.Ekins-Daukes (TTI) Carrier Removal and Defect Generation in Lattice-Mismatched InGaP under 1MeV Electron Irradiation
11:10-11:30 T.Takamoto (Sharp) Paper Like Thin Film Multijunction Solar Cells
11:30-13:00 Lunch
Session IV-I (SEE) R. Ecoffet (CNES)/S. Kuboyama (JAXA)
13:00-13:30 R. Schrimpf (Vanderbilt Univ.) Physically Based Simulation of Single-Event Effects in Advanced Technologies
13:30-14:00 T. Hirao (JAERI) Charge Collected in Si MOS Capacitors and SOI devices p+n diodes due to Heavy Ion Irradiation
14:00-14:20 Y.Takahashi (Nihon Univ.) Heavy-Ion Induced Current in MOS Structure
14:20-14:40 M.Bruggemann (IDA) Single Event Errors of FIFO Memory Devices
14:40-15:00 Break
Session IV-II (SEE) R.Schrimpf(Vanderbit Univ.)/ A. Makihara(HIREC)
15:00-15:30 D. McMorrow (NRL) Single-Event Effects Induced by Pulsed Laser Irradiation
15:30-16:00 J.S. Laird (JAERI) Time-Resolved Laser and Ion Microbeam Studies of Single Event Transients in High-Speed Optoelectronic Devices
16:00-
Poster Session H. Shindou(JAXA)/T.Ohshima(JAERI)
Solar Cell H. S. Lee (TTI) Minority-carrier injection annealing on the radiation-induced defects in AlInGaP for high efficiency multi-junction solar cells
Byung-Chul Hong (UEC) Effects of Wavelength Conversion of Luminescent Layer on Solar Cell for Space Use
H.Iwata (OECU) Change of Majority-Carrier Concentration in p-Type Silicon 10 MeV Proton Irradiation
H.Okada (Toyohashi Univ. of Technology) Study of high-energy proton and electron irradiation effects on poly- and single-crystalline CuInSe2 films
S.Kawakita (JAXA) Possibility Analysis of Cu(InGa)Se2 Thin-Film Solar Cells for Space Use
SEE T.Abe (Nihon Univ.) Consideration to reliability of laser testing for evaluating SEU tolerance
N.Ikeda (JAXA) SEB of Super Junction power MOSFET
S. Kuboyama (JAXA) Improved Model for Single-Event Burnout Mechanism
H.Fukui(Toshiba Co.) Study on Proton-induced Single Event Upset in Sub-0.1µm CMOS LSIs
S. Onoda (JAERI) Evaluation of Transient Current Induced by High Energy Charged Particles in SiPin Photodiode
T. Ohshima (JAERI) Analysis of Transient Current Induced in Silicon Carbide Diodes by Oxygen-ion Microbeams
TID/DISP H.Ohyama (Kumamoto National College of Technoligy) The degradation of the electrical properties of IGBTs by 2-MeV electron irradiation at high-temperatures
T.Hirao (JAERI) Effect of Damage on Transient Current Waveform Observed in GaAs Schottky Diode by Single Ion Hit
H. Itoh (JAERI) Change in the Electrical Characteristics of p-channel 6H-SiC MOSFETs by Gamma-ray Irradiation
K.Takeuchi (MELCO) Comparison of COTS SRAMs and SDRAMs on Total Ionizing Dose tolerance
Facility J.Blomgren (Uppsala University, The Svedberg Laboratory) A New Neutron Facility for Single-Event Effect Testing
T. Sato (JAERI) Development of a High-Energy Heavy Ion Microbeam System at the JAERI AVF Cycrotron
Neutron T.Wakasa (JAERI) Measurement and Analysis of Single Event Transient Current Induced in Si devices by Quasi-monoenergetic Neutrons.
Y.Watanabe (Kyushu Univ.) Analyses of initial processes in neutron-induced single-event effects using a new nuclear reaction database for Silicon.

Oct. 8 (Fri), 2004
08:45- Registration
Session V-I (SOI/HBD) D. McMorrow (NRL)/T.Ohshima (JAERI)
09:30-10:00 V. F.-Cavrois (CEA) SOI Technologies in Space and Terrestrial Environments
10:00-10:30 R.C. Lacoe (Aerospace Corp.) Fabricating Radiation-Hardened Digital Components at Commercial CMOS Foundries Using Hardness-By-Design Techniques
10:30-10:50 S.Baba(OKI) Fully Depleted SOI Process Technology at OKI
Session V-II (SOI/HBD) V. F.-Cavrois (CEA)/H.Itoh(JAERI)
10:50-11:10 K.Hirose(JAXA/ISAS) Development of SOI SRAM and SOI Logics for Space Applications
11:10-11:30 A.Makihara (HIREC) Hardness-By Design Methodology Applied to Deep Submicron Fully Depleted CMOS/SOI Commercial Proces
11:30-11:50 H.Ohyama (Kumamoto National College of Technology) Radiation Source Dependence on Floating-Body Effect in Thin Gate Oxide Fully Depleted SOI n-MOSFETs
11:50-11:55
Closing Remarks K.Noda(JAERI)
11:55-13:15 Lunch
13:15-15:00 JAXA tour

第6回宇宙用半導体素子放射線影響国際ワークショップ組織委員会

　委員長　：渡辺　篤太郎　宇宙航空研究開発機構　総合技術研究本部執行役
　副委員長：野田　健治　　日本原子力研究所　高崎研究所　所長

　委　員　：
大西　一功 日本大学
大山　英典 国立高等専門学校機構　熊本電波工業高等専門学校
梨山　　勇 高信頼性部品（株）
山口　真史 豊田工業大学大学院
田島　道夫 宇宙航空研究開発機構
久保山智司 宇宙航空研究開発機構
松田　純夫 宇宙航空研究開発機構
伊藤　久義 日本原子力研究所
平尾　敏雄 日本原子力研究所

　事務局：
久保山智司 宇宙航空研究開発機構
松田　純夫 宇宙航空研究開発機構
今泉　充 宇宙航空研究開発機構
城野　隆 宇宙航空研究開発機構
伊藤　久義 日本原子力研究所
平尾　敏雄 日本原子力研究所
大島　武 日本原子力研究所